 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Advance Product Information July 22, 2005 4 Watt Ka Band HPA Key Features * * * * * * * * TGA4505 Frequency Range: 24-31 GHz 23 dB Nominal Gain 35.5 dBm Nominal P1dB @30 GHz 36.0 dBm Nominal Psat @30 GHz 40 dBc at SCL Pout 20dBm 0.25 um pHEMT 2MI Technology Bias 6 V @ 2.1 A Idq Chip size 4.29 x 3.02 x .05 mm (0.169 x 0.119 x 0.002 in) Primary Applications Product Description The TriQuint TGA4505 is a compact 4 Watt High Power Amplifier MMIC for Kaband applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process. The TGA4505 provides a nominal 35.5 dBm of output power at 1 dB gain compression from 24-32 GHz with a small signal gain of 23 dB. The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio. The TGA4505 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-free and RoHS compliant. Gain (dB) * * Satellite Ground Terminal Point-to-Point Radio Fixtured Data Bias Conditions: Vd = 6 V, Idq = 2.1A 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 20 22 24 26 28 30 32 34 36 38 40 Output Input Gain 36 30 24 12 6 0 -6 -12 -18 -24 -30 Frequency (GHz) 38 37 36 Psat Power (dBm) 35 P1dB 34 33 32 31 30 26 27 28 29 30 31 32 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Return Loss (dB) 18 Advance Product Information July 22, 2005 TABLE I MAXIMUM RATINGS Symbol V + - TGA4505 Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current: Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 8V -5V TO 0V 4A 62 mA 24 dBm 17.2 W 150 C 320 C -65 to 150 0C 0 0 Notes 2/ V I + 2/ | IG | PIN PD TCH TM TSTG 2/ 2/, 3/ 4/, 5/ 1/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70 C, the median life is 1E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 0 5/ TABLE II DC PROBE TEST (TA = 25 qC, nominal) NOTES 1/ 1/ 1/, 2/ 1/, 2/ 1/, 2/ SYMBOL MIN LIMITS MAX UNITS 70.5 79.5 1.5 30 30 mA mS V V V IDSS(Q35) GM (Q35) |VP(Q1, Q9, Q35)| |VBVGS(Q35)| |VBVGD(Q35)| 15 33 0.5 11 11 1/ Q35 is a 150 um Test FET 2/ VP, VBVGD, and VBVGS are negative. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2005 TABLE III RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 6V, Id = 2.1A) TGA4505-EPU SYMBOL PARAMETER TEST CONDITION F = 24-31 GHz TYPICAL UNITS Gain Small Signal Gain 23 dB IRL Input Return Loss F = 24-31 GHz 6 dB ORL Output Return Loss F = 24-31 GHz 12 dB PWR Output Power @ P1dB F = 24-31 GHz 35 dBm Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. TABLE IV THERMAL INFORMATION Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 6V ID = 2.05 A Pdiss = 12.3 W TCH o ( C) 128 RTJC (qC/W) 4.7 TM (HRS) 7.4E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 23 W with 4 W RF power delivered to load. Power dissipated is 19 W and the temperature rise in the channel is 88 C. Baseplate temperature must be reduced to 62 C to remain below the 150 C maximum channel temperature. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2005 TGA4505-EPU Measured Fixtured Data Bias Conditions: Vd = 6 V, Id = 2.1 A 30 25 20 15 Gain 36 30 24 Gain (dB) 10 5 0 -5 -10 -15 -20 -25 20 22 Input 12 6 0 -6 -12 -18 Output -24 -30 24 26 28 30 32 34 36 38 40 Frequency (GHz) 38 37 Psat Power (dBm) 36 35 P1dB 34 33 32 31 30 26 27 28 29 30 31 32 Frequency (GHz) Return Loss (dB) 4 18 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2005 TGA4505-EPU Measured Fixtured Data Bias Conditions: Vd = 6 V, Id = 2.1 A 40 Data taken @ 30 GHz 4.2 3.9 Pout (dBm) & Power Gain (dB) 35 30 25 20 15 10 5 0 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 Ids Gain Pout 3.6 3 2.7 2.4 2.1 1.8 Pin (dBm) 60 50 IMD3 (dBc) 40 30 20 10 0 12 14 16 18 20 22 24 26 28 30 32 24 GHz 25 GHz 26 GHz 27 GHz 28 GHz 29 GHz 30 GHz 31 GHz 32 GHz Output Power per tone (dBm) Ids (A) 5 3.3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2005 TGA4505-EPU Mechanical Drawing d " b A " ! " d % ! b A & % % d ( % b A $ & d ' ! b A ( # ! " d % # b A ! & " d % b A ' & # " (Ab !("Ab !'''Ab (d #d #d !(!Ab #d "d "d !'&'Ab !'&#Ab $&Ab$(d $ Ab$(d #!Ab%d "!Ab$d &Ab$d Abd $Ab%d #!Ab%d 'Ab$d d b A d $ b A " " d " b A " ! " d % ! b A & % % d ( % b A & # & d & & b A $ # ( d ! ' b A ! ( ! d ' ! b A % # ! " d % # b A ! & " dd # %% bb AA ' && ## d ( % b A ( ! # Vv)AAvyyvrrAvpur Uuvpxr)AA$A!ArsrrprAy 8uvArqtrAAiqAhqAqvrvAhrAuAAprrAsAhq 8uvAvr)AAA$ A! BI9ADTA768FTD9@APAAHHD8 7qAQhqAAE )AAAAASAADIAAAAAAAAA "AA!$A$AA' #"AA $AA "A%AA# $A#AA# $A'AA# "A#AA$ "A#AA$ #$A'AA% $A#AA# $A%AA# 7qAQhqAAE!)AAAAAWB AAAAAAAAAAA'AA'A"AA" 7qAQhqAAE")AAAAAW9 AAAAAAAAAAA 7qAQhqAAE#)AAAAAWB!AAAAAAAAAAA 7qAQhqAAE$)AAAAAW9!AAAAAAAAAAA!$AA 7qAQhqAAE&)AAAAAW9"AAAAAAAAAAA($AA 7qAQhqAAE')AAAAASAAPVUAAAAA 7qAQhqAAE 7qAQhqAAE 7qAQhqAAE 7qAQhqAAE 7qAQhqAAE 7qAQhqAAE()AAAAAW9"AAAAAAAAAAA($AA )AAAW9!AAAAAAAAAAA!$AA !)AAAWB!AAAAAAAAAAA ")AAAW9 AAAAAAAAAAA #)AAAWB $AA #$AA 7qAQhqAAE%)AAAAAWB"AAAAAAAAAAA'AA'A"AA" "AA!$A$AA' )AAAWB"AAAAAAAAAAA'AA'A"AA" AAAAAAAAAAA'AA'A"AA" GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2005 TGA4505-EPU Recommended Chip Assembly & Bonding Diagram Both-Sided Biasing Option 9G9G 9G XI XI SI SI SI SI SI SI XI XI 9J9J9J 9G GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2005 TGA4505-EPU Alternative Chip Assembly & Bonding Diagram Single-Side Biasing Option 9J9J9J 9G9G 9G XI XI XI SI SI SI SI SI 5) ,1 5) 287 SI GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2005 TGA4505-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com |
Price & Availability of TGA4505
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |